We produce microwave integrated circuits (MIC) and modules using gold-based thin-film technology. Based on ceramic substrates and taking into consideration the highest requirements for precision and quality, we are in a position to be able to produce future-oriented thin-film products. Not only do we manufacture customer-specific thin-film circuits, we also advise our customers about new technologies and solutions. Just send us your product inquiry!
We offer the following services:
- Production of prototypes, small series and series production
Our services include:
- Customer consulting for new solutions and technologies
- Checking of layouts by our engineers according to our design regulations
- CAD services
- Optimization of layouts to increase your profitability
| Substrates | Surfaces | Dielectric constant @ 1MHz eᵣ | 7 mil | 10 mil | 15 mil | 20 mil | 25 mil | 40 mil | Laser cutting | Laser drilling | Sawing |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Aluminium oxide 99.6% (Al₂O₃) | as fired | 9.8-10.1 | X | X | X | X | X | X | X | X | |
| Aliminium oxide 99.6% (Al₂O₃) | polish | 9.8-10.1 | X | X | X | X | X | X | X | X | |
| Aluminium oxide 99.6% (Al₂O₃) | TPS polish | 10.1-10.2 | X | X | X | X | X | X | X | X | |
| Aluminium nitride (AIN) | as fired | 8.8 | X | X | X | X | X | X | X | X | |
| Aluminium nitride (AIN) | polish | 8.8 | X | X | X | X | X | X | X | X | |
| Aluminium nitride (AIN) | 8.8 | X | X | X | X | X | X | X | X | ||
| Quartz glass (Si O₂) | polish | 3.8 | X | X | |||||||
| Ferrit substrate | polish (Ra=0.3) | 13.1-15.0 | X | X | X | X | X | X |
Typical tile sizes for Al2O3 and AlN are 2” x 2”, 2.5” x 2.5” and 4” x 4” and for ferrite substrates 2” x 2”.
Additional materials are available upon request. The availability and qualification for the thin-film processing are a pre-requisite.
Die Strukturierung des MIC-Substrates ist halbadditiv. Zuerst wird das Substrat mit einer Widerstandschicht (TaN), der Haftschicht (TaN) und einer dünnen Gold-Leiterschicht mittels Sputtern, einem Vakuumbeschichtungverfahren, versehen. Anschließend wird ein Fotolack aufgebracht und mit fotolithographischen Verfahren strukturiert. Die Au-Leitschicht wird galvansich auf die gewünschte Dicke verstärkt. Nach dem Entfernen des Fotolacks wird die endgültige Leiterbahnstruktur freigeätzt. Die Wahl des eigentlichen Schichtaufbaus hängt dabei von verschiedenen Faktoren ab, z.B. der geforderten Leitfähigkeit der Leitschicht, der Integration von Widerständen, der späteren Montagetechnik und den Umgebungsbedingungen beim Einsatz der Schaltung ab.
Für die Realisierung lötbarer Schaltungen bieten wir zusätzlich zur konventionellen bondbaren Gold Technologie zusätzlich einen ENIG-Prozess an, der eine zusätzliche partielle chemische Ni-Au-Beschichtung auf der Oberfläche vorsieht.
The AFT layer system
| Layer | Material | Nominal thickness [µm] | Thickness tolerance [µm] |
|---|---|---|---|
| Galvanic layer | AU Ni | <1 4 |
± 2 |
| Sputtered layer | AU | 3 5 10 | ± 1 ± 1 ± 2 |
| Sputtered layer | AU | 0,3 | |
| Adhesive layer | TiW | 0,14 | |
| Resistor layer | TaN |
For both layer structures, the TaN resistor layer can be realized with a sheet resistance R□ of 20 Ω, 50 Ω or 100 Ω with a tolerance of 0% / -30%. Depending on the circuit, a laser compensation of the resistors to ±1% is possible.
In specialized cases, sheet resistance of 42 Ω or 50 Ω with ±10% tolerance without compensation can be realized.
The most important design guidelines for circuit paths, resistors, through-hole plating and air bridges.
The following requirements apply for the circuit board widths and gap widths:
| Circuit paths | Thickness circuit path metallization | Min. circuit path/gap width | width tolerance | Min. circuit path/gap width* special request | Min. circuit path/gap width* special request |
|---|---|---|---|---|---|
| Gold (Au) | 3 μm | 20 μm | ± 3 μm | 10 μm | ± 2 μm |
| 5 – 10 μm | 50 μm | ± 5 μm | -- | -- |
* not in combination with through-hole plating
As a feature of thin-film circuit boards, we also offer:
- PI capacitors
- PI bridges
- Air bridges
Realization of PI capacitors and PI bridges
| Thickness PI [µm] | Thickness tolerance [µm] | Min. structure widths | |
|---|---|---|---|
| Capacitor and PI bridges | 4 μm | -2 / +1 | 20 μm |
Realization of air bridges
| Air bridges | Dimensions |
|---|---|
| Width of the bridge | ≥ 20 μm |
| Height of the bridge | 5 – 10 μm |
| Diameter of pillar | ≥ 20 μm |
Computer-controlled laser processing:
- Lasers of varying contours and cross-sections
- Laser boreholes with the smallest diameters of 0.150 μm for electrical through-hole plating
- Separation of circuit boards via laser scribing
- Separation of circuit boards with a wafer saw for substrates up to 4” x 4” and 1 mm thickness
